IRFP22N50A 12/15/99 www.irf.com 1 pd- 91833c smps mosfet hexfet ? power mosfet l switch mode power supply (smps) l uninterruptible power supply l high speed power switching benefits applications l low gate charge qg results in simple drive requirement l improved gate, avalanche and dynamic dv/dt ruggedness l fully characterized capacitance and avalanche voltage and current v dss r ds(on) max i d 500v 0.23 w 22a typical smps topologies l full bridge converters l power factor correction boost notes ? through ? are on page 8 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 22 i d @ t c = 100c continuous drain current, v gs @ 10v 14 a i dm pulsed drain current ? 88 p d @t c = 25c power dissipation 277 w linear derating factor 2.2 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 4.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings to-247ac
IRFP22N50A 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 12 CCC CCC s v ds = 50v, i d = 13a q g total gate charge CCC CCC 120 i d = 22a q gs gate-to-source charge CCC CCC 32 nc v ds = 400v q gd gate-to-drain ("miller") charge CCC CCC 52 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 26 CCC v dd = 250v t r rise time CCC 94 CCC i d = 22a t d(off) turn-off delay time CCC 47 CCC r g = 4.3 w t f fall time CCC 47 CCC r d = 11 w ,see fig. 10 ? c iss input capacitance CCC 3450 CCC v gs = 0v c oss output capacitance CCC 513 CCC v ds = 25v c rss reverse transfer capacitance CCC 27 CCC pf ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 4935 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 137 CCC v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance CCC 264 CCC v gs = 0v, v ds = 0v to 400v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ? CCC 1180 mj i ar avalanche current ? CCC 22 a e ar repetitive avalanche energy ? CCC 28 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 22a, v gs = 0v ? t rr reverse recovery time CCC 570 850 ns t j = 25c, i f = 22a q rr reverse recoverycharge CCC 6.1 9.2 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 22 88 a parameter typ. max. units r q jc junction-to-case CCC 0.45 r q cs case-to-sink, flat, greased surface 0.24 CCC c/w r q ja junction-to-ambient CCC 40 thermal resistance parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.55 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.23 w v gs = 10v, i d = 13a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 500v, v gs = 0v CCC CCC 250 v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current
IRFP22N50A www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 22a
IRFP22N50A 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 10 100 1000 10000 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 10000 100000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v, f = 1mhz c = c + c , c s ho rted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss
IRFP22N50A www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d
IRFP22N50A 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.8a 14a 22a fig 12d. typical drain-to-source voltage vs. avalanche current 570 580 590 600 610 620 630 640 0 4 8 12162024 a dsav av i , avalanche current ( a ) v , avalanche voltage (v)
IRFP22N50A www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRFP22N50A 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 12/99 to-247ac part marking information to-247ac package outline dimensions are shown in millimeters (inches) lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m ca s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d mm b - a - 15.90 (.626) 15.30 (.602) - b - 12 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain in ter n a tio n a l r e c tifie r lo g o a s se m b l y lot code example : this is an irfpe30 w ith assembly lo t c o d e 3a 1q part number date code (yyw w ) y y = ye a r ww week 3a1q 9302 ir fp e 30 a ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) ? i sd 22a, di/dt 190a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 4.87mh r g = 25 w , i as = 22a. (see figure 12a) ? pulse width 300s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss
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